Microchip Technology MCP355XDV-MS1 Data Sheet
© 2009 Microchip Technology Inc.
DS21950E-page 3
MCP3550/1/3
1.0
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
1.1
Maximum Ratings*
V
DD
...................................................................................7.0V
All inputs and outputs w.r.t V
SS
.... .......... -0.3V to V
DD
+ 0.3V
Difference Input Voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±10 mA
Storage Temperature ....................................-65°C to +150°C
Ambient temp. with power applied ................-55°C to +125°C
ESD protection on all pins (HBM, MM)
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±10 mA
Storage Temperature ....................................-65°C to +150°C
Ambient temp. with power applied ................-55°C to +125°C
ESD protection on all pins (HBM, MM)
............ ≥ 6 kV, ≥ 400V
Maximum Junction Temperature (T
J
). .........................+150°C
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply at -40°C
≤ T
A
≤ +85°C, V
DD
= 2.7V or 5.0V.
V
REF
= 2.5V. V
IN
+ = V
IN
- = V
CM
= V
REF
/2. All ppm units use 2*V
REF
as full scale range. Unless otherwise noted, specification
applies to entire MCP3550/1/3 family.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Noise Performance (MCP3550/1)
No Missing Codes
No Missing Codes
NMC
22
—
—
bits
At DC (Note 5)
Output Noise
e
N
—
2.5
—
µV
RMS
Effective Resolution
ER
—
21.9
—
bits RMS
V
REF
= 5V
Noise Performance (MCP3553)
No Missing Codes
No Missing Codes
NMC
20
—
—
bits
At DC (Note 5)
Output Noise
e
N
—
6
—
µV
RMS
Effective Resolution
ER
—
20.6
—
bits RMS
V
REF
= 5V
Conversion Times
MCP3550-50
MCP3550-50
t
CONV
-2.0%
80
+2.0%
ms
MCP3550-60
t
CONV
-2.0%
66.67
+2.0%
ms
MCP3551
t
CONV
-2.0%
73.1
+2.0%
ms
MCP3553
t
CONV
-2.0%
16.67
+2.0%
ms
Accuracy
Integral Non-Linearity
Integral Non-Linearity
INL
—
±2
6
ppm
T
A
= +25°C only (Note 2)
Offset Error
V
OS
-12
±3
+12
µV
T
A
= +25°C
—
±4
—
µV
T
A
= +85°C
—
±6
—
µV
T
A
= +125°C
Positive Full Scale Error
V
FS,P
-10
±2
+10
ppm
T
A
= +25°C only
Negative Full Scale Error
V
FS,N
-10
±2
+10
ppm
T
A
= +25°C only
Offset Drift
—
0.040
—
ppm/°C
Positive/Negative Full Scale Error
Drift
Drift
—
0.028
—
ppm/°C
Note 1:
This parameter is established by characterization and not 100% tested.
2:
INL is the difference between the endpoints line and the measured code at the center of the quantization band.
3:
This current is due to the leakage current and the current due to the offset voltage between V
IN
+ and V
IN
-.
4:
Input impedance is inversely proportional to clock frequency; typical values are for the MCP3550/1 device. V
REF
= 5V.
5:
Characterized by design, but not tested.
6:
Rejection performance depends on internal oscillator accuracy; see Section 4.0 “Device Overview” for more informa-
tion on oscillator and digital filter design. MCP3550/1 device rejection specifications characterized from 49 to 61 Hz.
tion on oscillator and digital filter design. MCP3550/1 device rejection specifications characterized from 49 to 61 Hz.