Microchip Technology MA330031-2 Data Sheet
dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X AND PIC24EPXXXGP/MC20X
DS70000657H-page 412
2011-2013 Microchip Technology Inc.
TABLE 30-14: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature
(unless otherwise stated)
Operating temperature
-40°C
T
A
+85°C for Industrial
-40°C
T
A
+125°C for Extended
Param
No.
Symbol
Characteristic
Min.
Typ.
Max.
Units
Conditions
Program Flash Memory
D130
E
P
Cell Endurance
10,000
—
—
E/W -40
C to +125C
D131
V
PR
V
DD
for Read
3.0
—
3.6
V
D132b
V
PEW
V
DD
for Self-Timed Write
3.0
—
3.6
V
D134
T
RETD
Characteristic Retention
20
—
—
Year Provided no other specifications
are violated, -40
C to +125C
D135
I
DDP
Supply Current during
Programming
Programming
)
—
10
—
mA
D136
I
PEAK
Instantaneous Peak Current
During Start-up
During Start-up
—
—
150
mA
D137a
T
PE
Page Erase Time
17.7
—
22.9
ms
T
PE
= 146893 FRC cycles,
T
A
= +85°C (See Note
D137b
T
PE
Page Erase Time
17.5
—
23.1
ms
T
PE
= 146893 FRC cycles,
T
A
= +125°C (See Note
D138a
T
WW
Word Write Cycle Time
41.7
—
53.8
µs
T
WW
= 346 FRC cycles,
T
A
= +85°C (See Note
D138b
T
WW
Word Write Cycle Time
41.2
—
54.4
µs
T
WW
= 346 FRC cycles,
T
A
= +125°C (See Note
Note 1:
Data in “Typical” column is at 3.3V, +25°C unless otherwise stated.
2:
Parameter characterized but not tested in manufacturing.
3:
Other conditions: FRC = 7.37 MHz, TUN<5:0> = 011111 (for Minimum), TUN<5:0> = 100000 (for
Maximum). This parameter depends on the FRC accuracy (see
Maximum). This parameter depends on the FRC accuracy (see
) and the value of the FRC
Oscillator Tuning register (see
). For complete details on calculating the Minimum and
Maximum time, see