Microchip Technology DV102012 Data Sheet

 2011 Microchip Technology Inc.

DS41606B-page 39

Ambient temperature under bias......................................................................................................... -40°C to +85°C
Storage temperature ........................................................................................................................  -65°C to +150°C
Voltage on V

DD

 with respect to V

SS

....................................................................................................  -0.3V to +6.5V

Voltage on all other pins with respect to V

SS

  ........................................................................... -0.3V to (V

DD

 + 0.3V)

Total power dissipation................................................................................................................................... 800 mW
Maximum current out of V

SS

 pin ....................................................................................................................  300 mA

Maximum current into V

DD

 pin .......................................................................................................................  250 mA

Input clamp current (V

I

 < 0 or V

I

 > V

DD

)

20 mA

Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the 
device. This is a stress rating only and functional operation of the device at those or any other conditions above those 
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for 
extended periods may affect device reliability.

† NOTICE: This device is sensitive to ESD damage and must be handled appropriately. Failure to properly handle 
and protect the device in an application may cause partial to complete failure of the device.