Microchip Technology 25LC320/SN Memory IC SOIC-8 25LC320/SN Data Sheet
Product codes
25LC320/SN
25AA320/25LC320/25C320
DS21227F-page 2
© 2008 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
........................................................................................................ -0.6V to V
CC
+ 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins .......................................................................................................................................... 4 kV
TABLE 1-1:
DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
V
CC
= 1.8V to 5.5V
Automotive (E):T
A
= -40°C to +125°C V
CC
= 2.5V to 5.5V
Param.
No.
Sym.
Characteristics
Min.
Max.
Units
Conditions
D1
V
IH1
High-level input
voltage
voltage
2.0
V
CC
+1
V
V
CC
≥ 2.7V (Note)
D2
V
IH2
0.7 V
CC
V
CC
+1
V
V
CC
< 2.7V (Note)
D3
V
IL1
Low-level input
voltage
voltage
-0.3
0.8
V
V
CC
≥ 2.7V (Note)
D4
V
IL2
-0.3
0.3 V
CC
V
V
CC
< 2.7V (Note)
D5
V
OL
Low-level output
voltage
voltage
—
0.2
V
I
OL
= 1.0 mA, V
CC
< 2.5V
D6
V
OH
High-level output
voltage
voltage
V
CC
-0.5
—
V
I
OH
= -400
μA
D7
I
LI
Input leakage current
—
±1
μA
CS = V
CC
, V
IN
= V
SS
TO
V
CC
D8
I
LO
Output leakage
current
current
—
±1
μA
CS = V
CC
, V
OUT
= V
SS
TO
V
CC
D9
C
INT
Internal Capacitance
(all inputs and
outputs)
(all inputs and
outputs)
—
7
pF
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V (Note)
D10
I
CC
Read Operating Current
—
—
—
1
500
mA
μA
V
CC
= 5.5V; F
CLK
= 3.0 MHz;
SO = Open
V
V
CC
= 2.5V; F
CLK
= 2.0 MHz;
SO = Open
D11
I
CC
Write
—
—
—
5
3
3
mA
mA
mA
V
CC
= 5.5V
V
CC
= 2.5V
D12
I
CCS
Standby Current
—
—
—
5
1
1
μA
μA
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
Note:
This parameter is periodically sampled and not 100% tested.