Microchip Technology 93LC56BT-I/OT Memory IC SOT-23-6 93LC56BT-I/OT Data Sheet

Product codes
93LC56BT-I/OT
Page of 36
 2003-2011 Microchip Technology Inc.
DS21794G-page 3
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
..........................................................................................................-0.6V to V
CC
 +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins
  4 kV
TABLE 1-1:
DC CHARACTERISTICS
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
All parameters apply over the specified 
ranges unless otherwise noted.
Industrial (I): 
T
A
 = -40°C to +85°C, V
CC
 = +1.8V to +5.5V
Automotive (E):  T
A
 = -40°C to +125°C, V
CC
 = +2.5V to +5.5V
Param. 
No.
Symbol
Parameter
Min
Typ
Max
Units
Conditions
D1
V
IH
1
V
IH
2
High-level input voltage
2.0
0.7 V
CC

V
CC
 +1
V
CC
 +1
V
V
V
CC
 
2.7V
V
CC
 < 2.7V
D2
V
IL
1
V
IL
2
Low-level input voltage
-0.3
-0.3

0.8
0.2 V
CC
V
V
V
CC
 
2.7V
V
CC
 < 2.7V
D3
Vol1
Vol2
Low-level output voltage


0.4
0.2
V
V
I
OL
 = 2.1 mA, V
CC
 = 4.5V
I
OL
 = 100 
A, V
CC
 = 2.5V
D4
V
OH
1
V
OH
2
High-level output voltage
2.4
V
CC
 - 0.2


V
V
I
OH
 = -400 
A, V
CC
 = 4.5V
I
OH
 = -100 
A, V
CC
 = 2.5V
D5
I
LI
Input leakage current
±1
A
V
IN
 = V
SS
 or V
CC
D6
I
LO
Output leakage current
±1
A
V
OUT
 = V
SS
 or V
CC
D7
C
IN
C
OUT
Pin capacitance (all inputs/
outputs)
7
pF
V
IN
/V
OUT
 = 0V (Note 1)
T
A
 = 25°C, F
CLK
 = 1 MHz
D8
I
CC
 write Write current

500
2
mA
A
F
CLK
 = 3 MHz, Vcc = 5.5V
F
CLK
 = 2 MHz, Vcc = 2.5V
D9
I
CC
 read Read current



100
1
500
mA
A
A
F
CLK
 = 3 MHz, V
CC
 = 5.5V
F
CLK
 = 2 MHz, V
CC
 = 3.0V
F
CLK
 = 2 MHz, V
CC
 = 2.5V
D10
I
CCS
Standby current


1
5
A
A
I – Temp
E – Temp
CLK = CS = 0V
ORG = DI = V
SS
 or V
CC
(Note 2) (Note 3)
D11
V
POR
V
CC
 voltage detect
1.5
3.8
V
V
93AA56A/B/C, 93LC56A/B/C 
(Note 1)
 93C56A/B/C
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
ORG pin not available on ‘A’ or ‘B’ versions.
3:
Ready/
Busy
 status must be cleared from DO; seSection 3.4 "Data Out (DO)".