Microchip Technology TSSOP20EV Data Sheet

Page of 80
MCP434X/436X
DS22233A-page 32
© 2009 Microchip Technology Inc.
4.2
Memory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and non-volatile locations (see 
). 
TABLE 4-1:
MEMORY MAP AND THE SUPPORTED COMMANDS  
Address
Function
Memory 
Type
Allowed Commands
Disallowed Commands 
 
Factory 
Initialization
00h
Volatile Wiper 0 
RAM
Read, Write, 
Increment, Decrement
01h
Volatile Wiper 1 
RAM
Read, Write, 
Increment, Decrement
02h
Non-Volatile Wiper 0  EEPROM
Read, Write 
 Increment, 
Decrement
8-bit
80h
7-bit
40h
03h
Non-Volatile Wiper 1  EEPROM
Read, Write 
 Increment, 
Decrement
8-bit
80h
7-bit
40h
04h
Volatile 
TCON0 Register
RAM
Read, Write 
Increment, Decrement
05h
Status Register
RAM
Read
Write, Increment, Decrement
06h
Volatile Wiper 2 
RAM
Read, Write, 
Increment, Decrement
07h
Volatile Wiper 3 
RAM
Read, Write, 
Increment, Decrement
08h
Non-Volatile Wiper 2  EEPROM
Read, Write 
 Increment, 
Decrement
8-bit
80h
7-bit
40h
09h
Non-Volatile Wiper 3  EEPROM
Read, Write 
 Increment, 
Decrement
8-bit
80h
7-bit
40h
0Ah
Volatile 
TCON1 Register
RAM
Read, Write 
Increment, Decrement
0Bh
Data EEPROM
EEPROM
Read, Write 
 Increment, 
Decrement
000h
0Ch
Data EEPROM
EEPROM
Read, Write 
 Increment, 
Decrement
000h
0Dh
Data EEPROM
EEPROM
Read, Write 
 Increment, 
Decrement
000h
0Eh
Data EEPROM
EEPROM
Read, Write 
 Increment, 
Decrement
000h
0Fh
Data EEPROM
EEPROM
Read, Write 
 Increment, 
Decrement
000h
Note 1:
When an EEPROM write is active, these are invalid commands and will generate an error condition. The 
user should use a read of the Status register to determine when the write cycle has completed. To exit the 
error condition, the user must take the CS pin to the V
IH
 level and then back to the active state (V
IL
 or 
V
IHH
).
2:
This command on this address will generate an error condition. To exit the error condition, the user must 
take the CS pin to the V
IH
 level and then back to the active state (V
IL
 or V
IHH
).