Microchip Technology MCP3421DM-WS Data Sheet
PIC18F2455/2550/4455/4550
DS39632E-page 94
© 2009 Microchip Technology Inc.
7.5
Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
Configuration Words. External read and write
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM regardless of the state of the
code-protect Configuration bit. Refer to Section 25.0
“Special Features of the CPU” for additional
information.
Configuration Words. External read and write
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM regardless of the state of the
code-protect Configuration bit. Refer to Section 25.0
“Special Features of the CPU” for additional
information.
7.6
Protection Against Spurious Write
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during the Power-up Timer period (T
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during the Power-up Timer period (T
PWRT
,
parameter 33, Table 28-12).
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
7.7
Using the Data EEPROM
The data EEPROM is a high-endurance, byte-
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated
often). Frequently changing values will typically be
updated more often than specification D124 or D124A.
If this is not the case, an array refresh must be
performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated
often). Frequently changing values will typically be
updated more often than specification D124 or D124A.
If this is not the case, an array refresh must be
performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
EXAMPLE 7-3:
DATA EEPROM REFRESH ROUTINE
Note:
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124 or D124A.
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124 or D124A.
CLRF
EEADR
; Start at address 0
BCF
EECON1, CFGS
; Set for memory
BCF
EECON1, EEPGD
; Set for Data EEPROM
BCF
INTCON, GIE
; Disable interrupts
BSF
EECON1, WREN
; Enable writes
Loop
; Loop to refresh array
BSF
EECON1, RD
; Read current address
MOVLW
55h
;
Required
MOVWF
EECON2
; Write 55h
Sequence
MOVLW
0AAh
;
MOVWF
EECON2
; Write 0AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
BRA
$-2
INCFSZ EEADR, F
; Increment address
BRA
LOOP
; Not zero, do it again
BCF
EECON1, WREN
; Disable writes
BSF
INTCON, GIE
; Enable interrupts