Microchip Technology MA160014 Data Sheet
2010-2012 Microchip Technology Inc.
DS41412F-page 443
PIC18(L)F2X/4XK22
27.9
Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
Operating temperature -40°C
T
A
+125°C
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications
Programming Specifications
(1)
D170
V
PP
Voltage on MCLR/V
PP
pin
8
—
9
V
(Note 3), (Note 4)
D171
I
DDP
Supply Current during
Programming
Programming
—
—
10
mA
Data EEPROM Memory
D172
E
D
Byte Endurance
100K
—
—
E/W
-40
C to +85C
D173
V
DRW
V
DD
for Read/Write
V
DDMIN
—
V
DDMAX
V
Using EECON to read/
write
write
D175
T
DEW
Erase/Write Cycle Time
—
3
4
ms
D176
T
RETD
Characteristic Retention
—
40
—
Year
Provided no other
specifications are violated
specifications are violated
D177
T
REF
Number of Total Erase/Write
Cycles before Refresh
Cycles before Refresh
(2)
1M
10M
—
E/W
-40°C to +85°C
Program Flash Memory
D178
E
P
Cell Endurance
10K
—
—
E/W
-40
C to +85C (Note 5)
D179
V
PR
V
DD
for Read
V
DDMIN
—
V
DDMAX
V
D181
V
IW
V
DD
for Row Erase or Write
2.2
—
V
DDMAX
V
PIC18LF2X/4XK22
D182
V
IW
V
DDMIN
—
V
DDMAX
V
PIC18F2X/4XK22
D183
T
IW
Self-timed Write Cycle Time
—
2
—
ms
D184
T
RETD
Characteristic Retention
—
40
—
Year
Provided no other
specifications are violated
specifications are violated
†
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
only and are not tested.
Note 1:
These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
tions.
2:
Refer to
endurance.
3:
Required only if single-supply programming is disabled.
4:
The MPLAB ICD 2 does not support variable V
PP
output. Circuitry to limit the MPLAB ICD 2 V
PP
voltage must
be placed between theMPLAB ICD 2 and target system when programming or debugging with the MPLAB
ICD 2.
ICD 2.
5:
Self-write and Block Erase.