Linear Technology DC1329A - LTC4352 Low Voltage Ideal Diode Controller with Monitoring, LT4351 Replacement DC1329A DC1329A Data Sheet

Product codes
DC1329A
Page of 16
LTC4352
3
4352fa
elecTrical characTerisTics
 The 
l
 denotes the specifications which apply over the full operating 
temperature range, otherwise specifications are at T
A
 = 25°C. V
IN
 = 12V, V
SOURCE
 = V
IN
, V
OUT
 = V
IN
, V
CC
 Open, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supplies
V
IN
Input Operating Range
 
With External 2.9V to 4.7V V
CC
 Supply 
With External 4.7V to 6V V
CC
 Supply
l
2.9 
0
18 
V
CC 
18
V
V
CC(EXT)
V
CC
 External Supply Range
l
2.9
6
V
V
CC(INT)
V
CC
 Internal Regulator Voltage
l
3.5
4.1
4.7
V
I
IN
V
IN
 Supply Current
 
V
IN
 = 0V, V
CC
 = 5V, V
OUT
 = 18V 
V
IN
 = 0V, V
CC
 = 5V, V
OUT
 = 18V (LTC4352H)
l
1.4 
–10 
–10
–13 
–25
mA 
µA 
µA
I
CC
External V
CC
 Supply Current
V
CC
 = 5V, V
IN
 = 0V
l
1.25
2.5
mA
V
CC(UVLO)
V
CC
 Undervoltage Lockout Threshold
V
CC
 Rising
l
2.45
2.57
2.7
V
ΔV
CC(HYST)
V
CC
 Undervoltage Lockout Hysteresis
l
50
70
90
mV
Ideal Diode Control
V
FWD(REG)
Forward Regulation Voltage (V
IN
 − V
OUT
)
l
10
25
40
mV
ΔV
GATE
MOSFET Gate Drive (V
GATE
 – V
SOURCE
)
V
FWD
 = 0.1V, I = 0 and –1μA
l
5
6.1
7.5
V
t
ON(GATE)
GATE Turn-On Delay
C
GATE
 = 10nF, V
FWD
 = 0.2V
l
0.25
0.5
µs
t
OFF(GATE)
GATE Turn-Off Delay
C
GATE
 = 10nF, V
FWD
 = −0.2V
l
0.2
0.5
µs
Input/Output Pins
V
UV,OV(TH)
UV, OV Threshold Voltage
V
UV
 Falling, V
OV
 Rising
l
490
500
510
mV
ΔV
UV,OV(HYST)
UV, OV Threshold Hysteresis
l
2.5
5
8.5
mV
V
REV(TH)
REV Threshold Voltage
 
(LTC4352H)
l
0.8 
0.8
1.0 
1.0
1.2 
1.25
V
I
UV,OV
UV, OV Current
V = 0.5V
l
0
±1
µA
I
REV
REV Current
V
REV
 = 1V
l
7
10
13
µA
I
OUT
OUT Current
V
OUT
 = 0V, 12V
l
–13
200
µA
I
SOURCE
SOURCE Current
V
SOURCE
 = 0V
l
–85
–130
µA
I
CPO(UP)
CPO Pull-Up Current
V
CPO
 = V
IN
 = 2.9V 
V
CPO
 = V
IN
 = 18V
l
–60 
–50
–90 
–75
–115 
–100
µA 
µA
I
GATE
GATE Fast Pull-Up Current 
GATE Fast Pull-Down Current 
GATE Off Pull-Down Current
V
FWD
 = 0.2V, ΔV
GATE
 = 0V, V
CPO
 = 17V 
V
FWD
 = –0.2V, ΔV
GATE
 = 5V 
V
UV
 = 0V, ΔV
GATE
 = 2.5V
 
 
l
 
 
60
–1.5 
1.5 
100
 
 
145
µA
I
FLT,STAT(IN)
STATUS, FAULT Leakage Current
V = 18V
l
0
±1
µA
I
FLT,STAT(UP)
STATUS, FAULT Pull-Up Current
V = 0V
l
–8
–10
–12
µA
V
OL
STATUS, FAULT Output Low Voltage
I = 1.25mA
l
0.2
0.4
V
V
OH
STATUS, FAULT Output High Voltage
I = –1μA
l
V
CC 
– 1 V
CC 
– 0.5
V
ΔV
GATE(ST)
MOSFET On Detect Threshold
STATUS Pulls Low, V
FWD
 = 50mV 
STATUS Pulls Low, V
FWD
 = 50mV (LTC4352H)
l
0.3 
0.28
0.7 
0.7
1.1 
1.1
V
V
FWD(FLT)
Open MOSFET Threshold (V
IN
 – V
OUT
FAULT Pulls Low
l
200
250
300
mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings 
may cause permanent damage to the device. Exposure to any Absolute 
Maximum Rating for extended periods may affect device reliability and 
lifetime.
Note 2: All currents into device pins are positive; all currents out of device 
pins are negative. All voltages are referenced to GND unless otherwise 
specified.
Note 3: Internal clamps limit the GATE and CPO pins to a minimum of 5V 
above, and a diode below SOURCE. Driving these pins to voltages beyond 
the clamp may damage the device.