STMicroelectronics Discovery kit for STM32F401 line - with STM32F401VC MCU STM32F401C-DISCO STM32F401C-DISCO Data Sheet

Product codes
STM32F401C-DISCO
Page of 14
7
power eFFiciency
ST’s 90 nm process and advanced design techniques (voltage scaling) achieve best‑in‑class power efficiency in the high‑performance field.
Notes:
* Run mode Conditions: Coremark executed from Flash, peripherals OFF
Typ current V
DD
 range
260µA/MHz
@ 180MHz
= 46.8mA
@180MHz
238µA/MHz
@ 168MHz
= 40mA
@168MHz
137µA/MHz
@ 84MHz
= 11.5mA
@84MHz
280µA
Wake up time:110µs
310µA
Wake up time:17µs
100µA
Wake up time: 104µs
290µA
Wake up time: 17µs
11µA
Wake up time:118μs
50µA
Wake up time:19μs
2.2µA
3.1µA
Wake up time:318µs
2.2µA
3.1µA
Wake up time:375µs
2.2µA
3.1µA
Wake up time:314μs
<1µA
<1µA
<1µA
Dynamic RUN Mode*
STOP Mode
Measurements
conditions:
V
DD
 = 3.3V
Room temperature
Standby Mode
w/o and w/ RTC
V
BAT 
Mode
w/o or w/ RTC
STM32F427/437 and STM32F429/439
STM32F405/415 and STM32F407/417
STM32F401
I²C
SPI 
USB(*)
I²C
SPI
12-bit ADC
Note: (*) When V
DD
 is > 2.7 V
Accelerometer
Analog sensor
Gyroscope
Microphone
Host
1.8 to 3.3  V
1.8 to 3.3  V
STM32F401
HOST
STM32F401: SENSOR HUB
SENSORS
Pressure sensor
3 x 3 mm
HigH integration
Many consumer and industrial applications are seeking smaller form factors to offer more portability and freedom to the end consumer. Thanks 
to ST’s 90 nm process and best‑in‑class design strategies, the STM32F4 series is available in packages as small as 3 x 3 mm with rich 
connectivity and features sets.
stm32F401 as sensor hub example
BRSTM32F40113.indd   7
29-Aug-13   16:44:38