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STMicroelectronics Double output SMPS for power line application using ALTAIR04-900 primary controller EVLALTAIR900-M1 EVLALTAIR900-M1 Data Sheet

Product codes
EVLALTAIR900-M1
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Page of 29
Electrical characteristics
ALTAIR04-900
8/29
Doc ID 18211 Rev 2
V
ZCDL
Lower clamp voltage
I
ZCD
 = - 1 mA
-90
-60
-30
mV
V
ZCDA
Arming voltage
positive-going edge
100
110
120
mV
V
ZCDT
Triggering voltage
negative-going edge
50
60
70
mV
I
ZCDON
Min. source current during MOSFET ON-time
-25
-50
-75
µA
T
BLANK
Trigger blanking time after MOSFET’s turn-off
 
V
COMP
 
≥ 1.3V 
6
µs
V
COMP
 = 0.9V 
30
Line feedforward
R
FF
Equivalent feedforward resistor 
 
I
ZCD
 = 1mA
45
Ω
Transconductance error amplifier
V
REF
Voltage reference 
Tj = 25°C 
(1)
2.46
2.5 2.54
V
Tj = -25 to 125°C and 
Vcc=12V to 23V 
(1)
2.42
2.58
gm
Transconductance
ΔI
COMP
 = ±10 µA
V
COMP
 = 1.65 V
1.3
2.2
3.2
mS
Gv
Voltage gain
Open loop
73
dB
GB
Gain-bandwidth product
500
KHz
I
COMP
Source current
V
ZCD
 = 2.3V, V
COMP
 = 1.65V
70
100
µA
Sink current
V
ZCD
 = 2.7V, V
COMP
 = 1.65V
400
750
µA
V
COMPH
Upper COMP voltage
V
ZCD
 = 2.3 V
2.7
V
V
COMPL
Lower COMP voltage
V
ZCD
 = 2.7 V
0.7
V
V
COMPBM
Burst-mode threshold
1
V
Hys
Burst-mode hysteresis
65
mV
Current reference
V
IREFx
Maximum value
 
V
COMP
 = V
COMPL 
(1)
1.5
1.6
1.7
V
G
I
Current loop gain
V
COMP
 = V
COMPH
0.5
0.6
0.7
V
CREF
Current reference voltage
0.38
0.4
0.42
V
Current sense 
t
LEB
Leading-edge blanking
200
250
300
ns
t
d(H-L)
Delay-to-output
300
ns
V
CSx
Max. clamp value
 
dVcs/dt = 200 mV/µs 
(1)
0.7
0.75
0.8
V
V
CSdis
Hiccup-mode OCP level
(1)
0.92
1
1.08
V
1.
Parameters tracking each other
Table 4.
Electrical characteristics  (continued)
Symbol
Parameter
Test condition
Min. Typ. Max. Unit