STMicroelectronics Advanced IGBT/MOSFET driver DEMOTD350 DEMOTD350 Data Sheet

Product codes
DEMOTD350
Page of 17
Electrical characteristics
TD350
6/17
Doc ID 9525 Rev 6
4 Electrical 
characteristics
T
A
 = -20 to 125 °C, VH=16 V, VL=-10 V (unless otherwise specified)
 
Table 5.
Electrical characteristics 
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
Input
V
ton
IN turn-on threshold voltage
0.8
1.0
V
V
toff
IN turn-off threshold voltage
4.0
4.2
V
t
onmin
Minimum pulse width
100
135
220
ns
I
inp
IN input current
1
μA
Voltage reference 
(1)
V
ref
Voltage reference
T=25°C
T
min
<T<T
max
4.85
4.77
5.00
5.15
5.22
V
V
I
ref
Maximum output current
10
mA
Desaturation protection
V
des
Desaturation threshold
6.5
7.2
7.9
V
I
des
Source current
250
μA
Fault output
t
fault
Delay for fault detection
500
ns
V
FL
FAULT low voltage
I
FLsink
=10mA
1
V
Clamp
V
tclamp
CLAMP pin voltage threshold
2.0
V
V
CL
Clamp low voltage
T=25°C; I
CLsink
=500mA
T
min
<T<T
max
; I
CLsink
=500mA
VL+2.5
VL+3.0
V
V
Off delay
V
tdel
Voltage threshold
2.35
2.50
2.65
V
R
del
Discharge resistor
I=1mA
500
Ω
Off levels
I
blvoff
LVOFF peak input current (sink)
LVOFF=12V
120
200
μA
V
iolv
Offset voltage
LVOFF=12V
-0.3
-0.15
0
V
Outputs
V
OL1
Output low voltage at Iosink=20mA
VL+0.35
V
V
OL2
Output low voltage at Iosink=200mA
T=25°C
T
min
<T<T
max
VL+1.0
VL+1.5
V
V
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