On Semiconductor N/A BC 637 NPN Case type TO 92 I(C) 1.5 A BC637G Data Sheet
Product codes
BC637G
BC637, BC639, BC639−16
http://onsemi.com
3
I C
, COLLECT
OR CURRENT
(mA)
h
FE
, DC CURRENT
GAIN
f, CURRENT-GAIN — BANDWIDTH PRODUCT
(MHz)
T
V
, VOL
TAGE (VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
°
°
θ
1000
1
2
5
10
20
50
100
200
500
100
1
2
3
4 5
7
10
20
30 40 50 70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC635
BC637
BC639
BC637
BC639
P
D
T
A
25
°C
P
D
T
C
25
°C
SOA = 1S
P
D
T
C
25
°C
P
D
T
A
25
°C
500
200
100
50
20
1
3
5
10
30
50
100
300 500
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
V
CE
= 2 V
500
300
100
50
20
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain — Bandwidth Product
V
CE
= 2 V
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2 V
V
CE(sat)
@ I
C
/I
B
= 10
-0.2
-1.0
-2.2
-1.6
1
3
5
10
30
50
100
300 500
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
V
CE
= 2 VOLTS
DT = 0°C to +100°C
q
V
for V
BE