Fairchild Semiconductor N/A BCV71 Data Sheet

©2004 Fairchild Semiconductor Corporation

Rev. A, April 2004

T

a

=25

°

C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

a

=25

°

C unless otherwise noted

T

a

=25

°

C unless otherwise noted

Device mounted on FR-4PCB 40mm 

×

 40mm 

×

 1.5mm

V

CEO

Collector-Emitter Voltage

60

V

V

CBO

Collector-Base Voltage

80

V

V

EBO

Emitter-Base Voltage

5.0

V

I

C

Collector current (DC)

500

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 ~ +150

°

C

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = 10

µ

A, I

E

 = 0

80

V

V

(BR)CEO

Collector-Emitter Breakdown Voltage

I

C

 = 2mA, I

B

 = 0

60

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = 10

µ

A, I

C

 = 0

5.0

V

I

CBO

Collector Cutoff Current

V

CB

 = 20V, I

E

 = 0

V

CB

 = 20V, I

E

 = 0, T

a

 = 100

°

C

100

10

nA

µ

A

h

FE

DC Current Gain

I

C

 = 2.0mA, V

CE

 = 5.0V 

110

220

V

CE(sat)

Collector-Emitter Saturation Voltage

I

C

 = 10mA, I

B

 = 0.5mA

0.25

V

V

BE(on)

Base-Emitter On Voltage

I

C

 = 2.0mA, V

CE

 = 5.0V

0.55

0.7

V

P

D

Total Device Dissipation
Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

• This device is designed for general purpose applications at collector 

currents to 300mA.

• Sourced from process 10.

1. Base  2. Emitter  3. Collector 

1

2

3

SOT-23