On Semiconductor N/A BC 639 NPN Case type TO 92 I(C) 1.5 A BC639 Data Sheet
Product codes
BC639
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 1
1
Publication Order Number:
BC637/D
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
BC637
BC639
V
CEO
60
80
Vdc
Collector - Base Voltage
BC637
BC639
V
CBO
60
80
Vdc
Emitter - Base Voltage
V
EBO
5.0
Vdc
Collector Current − Continuous
I
C
1.0
Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
800
12
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
R
qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R
qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
COLLECTOR
2
3
BASE
1
EMITTER
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 14
x
= 7 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
BC63
9−16
AYWW G
G
BC
63x
AYWW G
G