Fairchild Semiconductor N/A BC636TA Data Sheet
Product codes
BC636TA
BC636 — PNP Epit
axial Silicon T
ransisto
r
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC636 Rev. C3
1
March 2009
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
Absolute Maximum Ratings
T
a
= 25
°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CER
Collector-Emitter Voltage at R
BE
=1K
Ω -45
V
V
CES
Collector-Emitter Voltage
-45
V
V
CEO
Collector-Emitter Voltage
-45
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-1
A
I
CP
Peak Collector Current
-1.5
A
I
B
Base Current
-100
mA
P
C
Collector Power Dissipation
1
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
=0
-45
V
I
CBO
Collector Cut-off Current
V
CB
= -30V, I
E
=0
-0.1
μA
I
EBO
Emitter Cut-off Current
V
EB
= -5V, I
C
=0
-10
μA
h
FE1
h
FE2
h
FE3
DC Current Gain
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
25
40
25
40
25
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
-0.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -2V, I
C
= -500mA
-1
V
f
T
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA,
f=50MHz
100 MHz
1. Emitter 2. Collector 3. Base
TO-92
1