Fairchild Semiconductor N/A BC63916_D27Z Data Sheet
Product codes
BC63916_D27Z
BC63916 — NPN Epit
axial Silicon
T
ransistor
© 2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC63916 Rev. 1.1.0
1
December 2013
BC63916
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
Ordering Information
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. Pulse test: pulse width ≤ 300
1. Pulse test: pulse width ≤ 300
μs, duty cycle ≤ 2.0%.
Part Number
Top Mark
Package
Packing Method
BC63916_D74Z
BC639-16
TO-92 3L
Ammo
BC63916_D27Z
BC639-16
TO-92 3L
Tape and Reel
Symbol
Parameter
Value
Unit
V
CER
Collector-Emitter Voltage at R
BE
= 1 k
Ω
100
V
V
CES
Collector-Emitter Voltage
100
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
1
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to 150
°C
1. Emitter 2. Collector 3. Base
TO-92
1