Fairchild Semiconductor N/A 2N6520TA Data Sheet

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

2N6520 Rev. B1

1 

June 2009

• High Voltage Transistor
• Collector-Emitter Voltage: V

CBO

= -350V

• Collector Dissipation: P

C

 (max)=625mW

• Complement to 2N6517

T

A

 = 25°C unless otherwise noted

 V

CBO

 Collector-Base Voltage

-350

V

 V

CEO

 Collector-Emitter Voltage

-350

V

 V

EBO

 Emitter-Base Voltage

-5

V

 I

C

 Collector Current

-500

mA

 I

B

 Base Current

-250

mA

 P

C

 Collector Power Dissipation

0.625

W

 Derate above 25

°C

5

mW/

°C

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature

-55 to +150

°C

1. Emitter   2. Base   3. Collector

TO-92

1