Fairchild Semiconductor N/A 2N5210TFR Data Sheet

This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1

µ

A to 50 mA.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics      

TA = 25°C unless otherwise noted

V

CEO

Collector-Emitter Voltage

50

V

V

CBO

Collector-Base Voltage

50

V

V

EBO

Emitter-Base Voltage

4.5

V

I

C

Collector Current - Continuous

100

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

2N5210, Rev B

P

D

 

Total Device Dissipation 
 

Derate above 25

°

C 

625 

5.0 

350 

2.8 

mW 

mW/

°

C 

R

θ

JC

 

Thermal Resistance, Junction to Case 

83.3 

 

°

C/W 

R

θ

JA

 

Thermal Resistance, Junction to Ambient 

200 

357 

°

C/W 

 

 

2002 Fairchild Semiconductor Corporation