On Semiconductor N/A BC 327/16 PNP Case type TO 92 I(C) 1 A BC327-025G Data Sheet
Product codes
BC327-025G
BC327, BC327−16, BC327−25, BC327−40
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA, I
B
= 0)
V
(BR)CEO
−45
−
−
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −100 mA, I
E
= 0)
V
(BR)CES
−50
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mA, I
C
= 0)
V
(BR)EBO
−5.0
−
−
Vdc
Collector Cutoff Current
(V
CB
= −30 V, I
E
= 0)
I
CBO
−
−
−100
nAdc
Collector Cutoff Current
(V
CE
= −45 V, V
BE
= 0)
I
CES
−
−
−100
nAdc
Emitter Cutoff Current
(V
EB
= −4.0 V, I
C
= 0)
I
EBO
−
−
−100
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −100 mA, V
CE
= −1.0 V)
BC327
BC327−16
BC327−25
BC327−40
(I
C
= −300 mA, V
CE
= −1.0 V)
h
FE
100
100
160
250
40
−
−
−
−
−
630
250
400
630
−
−
Base−Emitter On Voltage
(I
C
= −300 mA, V
CE
= −1.0 V)
V
BE(on)
−
−
−1.2
Vdc
Collector−Emitter Saturation Voltage
(I
C
= −500 mA, I
B
= −50 mA)
V
CE(sat)
−
−
−0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= −10 V, I
E
= 0, f = 1.0 MHz)
C
ob
−
11
−
pF
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
−
260
−
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
, NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
q
JC
(t) = (t) q
JC
q
JC
= 100°C/W MAX
q
JA
(t) = r(t) q
JA
q
JA
= 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t
POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
q
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE