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Rohm Semiconductor IMT2AT108 Bipolar Transistor Emitter reverse voltage U(CEO) -50 V IMT2AT108 Data Sheet

Product codes
IMT2AT108
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EMT2 / UMT2N / IMT2A 
                                                                                                                                                                     
Transistors
  
Rev.A 
1/2
 
General purpose (dual transistors) 
EMT2 / UMT2N / IMT2A 
 
 
zFeatures 
1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 
 
 
zEquivalent circuits 
(1)
(2)
(3)
(4) (5)
(6)
(6)
(5)
(4)
(3) (2)
(1)
EMT2 / UMT2N
IMT2A
Tr
2
Tr
1
Tr
1
Tr
2
 
 
 
zAbsolute maximum ratings (Ta=25
°C) 
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−
60
−
50
−
6
−
150
300(TOTAL)
150(TOTAL)
EMT2 / UMT2N
IMT2A
150
−
55
 to 
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 
dissipation
Junction temperature
Storage temperature
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
1
∗
2
 
 
 
zPackage, marking, and packaging specifications 
EMT2
EMT6
T2
T2R
8000
IMT2A
SMT6
T2
T108
3000
UMT2N
UMT6
T2
TR
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
 
 
 
zExternal dimensions (Unit : mm) 
ROHM  :  EMT6
EMT2
ROHM  :  UMT6
EIAJ  :  SC-88
UMT2N
ROHM  :  SMT6
EIAJ  :  SC-74
IMT2A
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0.1Min.
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
 
 
zElectrical characteristics (Ta=25
°C) 
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
−
60
−
50
−
6
−
−
−
120
−
−
−
−
−
−
−
−
140
−
−
−
−
0.1
−
0.1
−
0.5
560
−
V
V
V
µ
A
µ
A
V
−
MHz
∗
Cob
−
4
5
pF
I
C
=−
50
µ
A
I
C
=−
1mA
I
E
=−
50
µ
A
V
CB
=−
60V
V
EB
=−
6V
V
CE
=−
12V, I
E
=
2mA, f
=
100MHz
V
CE
=−
12V, I
E
=
0A, f
=
1MHz
I
C
/I
B
=−
50mA/
−
5mA
V
CE
=−
6V, I
C
=−
1mA
∗
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance