On Semiconductor N/A BC 550 C NPN Case type TO 92 I(C) 0.2 A BC550CG Data Sheet

©

 Semiconductor Components Industries, LLC, 2007

Publication Order Number:

BC549C, BC550C

Low Noise Transistors

•

These are Pb−Free Devices*

Collector − Emitter Voltage

BC549C
BC550C

V

CEO

30
45

Vdc

Collector − Base Voltage

BC549C
BC550C

V

CBO

30
50

Vdc

Emitter − Base Voltage

V

EBO

5.0

Vdc

Collector Current − Continuous

I

C

100

Vdc

Total Device Dissipation @ T

A

 = 25

°

C

Derate above = 25

°

C

P

D

625

5.0

mW

mW/

°

C

Total Device Dissipation @ T

A

 = 25

°

C

Derate above = 25

°

C

P

D

1.5

12

W

mW/

°

C

Operating and Storage Junction
Temperature Range

T

J

, T

stg

−55 to +150

°

C

Thermal Resistance, Junction−to−Ambient

R

q

JA

200

°

C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3

°

C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

BC5xyC = Device Code

x = 4 or 5
y = 9 or 0

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

BC549CG

TO−92

(Pb−Free)

5000 Units / Bulk

BC550CG

TO−92

(Pb−Free)

5000 Units / Bulk

(Note: Microdot may be in either location)

BC5x

yC

AYWW

G

G

COLLECTOR

1

2

BASE

3

EMITTER

1 2

3

STRAIGHT LEAD

BULK PACK