Rohm Semiconductor IMT4T108 Bipolar Transistor Emitter reverse voltage U(CEO) -120 V IMT4T108 Data Sheet
Product codes
IMT4T108
IMT4
Transistors
Rev.A
1/2
General purpose (dual transistors)
IMT4
zFeatures
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
zPackage, marking, and Packaging specifications
IMT4
SMT6
T4
T108
3000
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
IMT4
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
zEquivalent circuit
IMT4
(4)
Tr
2
Tr
1
(5)
(6)
(3)
(2)
(1)
zAbsolute maximum ratings (Ta=25
°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−
120
−
120
−
5
−
50
300 (TOTAL)
150
−
55 to
+
150
Unit
V
V
V
mA
mW
∗
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗
200mW per element must not be exceeded.
zElectrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
−
120
−
120
−
5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
−
0.5
−
0.5
V
V
V
µ
A
µ
A
V
I
C
=
−
50
µ
A
I
C
=
−
1mA
I
E
=
−
50
µ
A
V
CB
=
−
100V
V
EB
=
−
4V
I
C
/I
B
=
−
10mA/
−
1mA
h
FE
180
−
820
−
V
CE
=
−
6V, I
C
−
2mA
Transition frequency
f
T
−
140
−
MHz
∗
V
CE
=
−
12V, I
E
=2mA, f=100MHz
∗
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage