Rohm Semiconductor IMD3AT108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMD3AT108 Data Sheet
Product codes
IMD3AT108
EMD3 / UMD3N / IMD3A
Transistors
Rev.D 1/3
General purpose
(Dual digital transistors)
(Dual digital transistors)
EMD3 / UMD3N / IMD3A
zFeatures
1) Both the DTA114E chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
−” sign on DTr
2
values for the PNP
type have been omitted.
zEquivalent circuits
zEquivalent circuits
EMD3 / UMD3N
IMD3A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
2
R
1
R
2
=10k
Ω
R
1
=10k
Ω
R
2
=10k
Ω
R
1
=10k
Ω
zAbsolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
−
10
V
V
IN
40
I
O
50
mA
I
C (Max.)
100
Tj
150
˚C
Tstg
−
55 to
+
150
˚C
Pd
EMD3, UMD3N
150 (TOTAL)
mW
IMD3A
300 (TOTAL)
∗
1
∗
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
zDimensions (Unit : mm)
ROHM : EMT6
EMD3
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
UMD3N
(6) (5) (4)
(1) (2) (3)
(6) (5) (4)
(1) (2) (3)
(4)
(5)
(6)
(3)
(2)
(1)
Abbreviated symbol : D3
Abbreviated symbol : D3
Abbreviated symbol : D3
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
IMD3A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions