Rohm Semiconductor IMH11AT110 Bipolar Transistor Emitter reverse voltage U(CEO) 40 V IMH11AT110 Data Sheet
Product codes
IMH11AT110
EMH11 / UMH11N / IMH11A
Transistors
Rev.A 2/3
zAbsolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
V
IN
−
10
40
V
I
O
50
mA
I
C (Max.)
100
150
mA
Tstg
−
55 to
+
150
°
C
°
C
Pd
EMH11,UMH11N
150 (TOTAL)
mW
IMH11A
300 (TOTAL)
∗
1
∗
2
Tj
Supply voltage
Input voltage
Output current
Collector current
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Junction temperature
zElectrical characteristics (Ta=25
°C)
Parameter
Symbol
I
I
V
I (off)
V
I (on)
V
O (on)
I
O (off)
R
1
G
I
R
2
/R
1
Min.
−
3
−
−
−
−
−
7
30
0.8
−
−
−
−
−
−
10
−
1
0.5
−
0.3
0.1
0.88
0.5
13
−
1.2
V
V
CC
=5V, I
O
=100
µ
A
V
O
=0.3V, I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
−
V
O
=5V, I
O
=5mA
V
mA
µ
A
k
Ω
−
−
−
Typ.
Max.
Unit
Conditions
f
T
−
250
−
V
CE
=10V, I
E
=
−
5mA, f=100MHz
MHz
∗
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
∗
Transition frequency of the device
zElectrical characteristic curves
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
(ON characteristics)
100
µ
200
µ
500
µ
1m
2m
5m 10m
20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=
−
40
°
C
25
°
C
100
°
C
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
(OFF characteristics)
0
3
10m
1
µ
2m
5m
1m
200
µ
500
µ
100
µ
20
µ
50
µ
10
µ
2
µ
5
µ
0.5
1
1.5
2
2.5
V
CC
=5V
Ta=100
°
C
25
°
C
−
40
°
C
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
100
µ
200
µ
500
µ
1m
2m
5m 10m
20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
V
O
=5V
Fig.3 DC current gain vs. output
current
current
Ta=100
°
C
25
°
C
−
40
°
C