On Semiconductor N/A BC 560 C PNP Case type TO 92 I(C) 0.2 A BC560CG Data Sheet
Product codes
BC560CG
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 4
1
Publication Order Number:
BC560C/D
BC560C
Low Noise Transistors
PNP Silicon
Features
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
CEO
−45
Vdc
Collector−Base Voltage
V
CBO
−50
Vdc
Emitter−Base Voltage
V
EBO
−5.0
Vdc
Collector Current − Continuous
I
C
−100
mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
R
qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R
qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
Device
Package
Shipping
ORDERING INFORMATION
BC560CG
TO−92
(Pb−Free)
5000 Units / Bulk
BC560CZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC56
0C
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)