Rohm Semiconductor IMD10AT108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMD10AT108 Data Sheet
Product codes
IMD10AT108
IMD10A
Transistors
Rev.B
1/3
Power management (dual digital transistors)
IMD10A
zFeatures
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low V
CE(sat)
of drive transistors for low power
dissipation.
zDimensions (Unit : mm)
ROHM : SMT6
Each lead has same dimensions
EIAJ : SC-74
(4)
(5)
(6)
(3)
(2)
(1)
zPackage, marking, and packaging specifications
Part No.
IMD10A
SMT6
D10
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25
°C)
zEquivalent circuit
DTr2
DTr1
(4)
(5)
(6)
(3)
(2)
(1)
R1
R1=10k
Ω
R2=100
Ω
R1
R2
Parameter
Symbol
V
CC
V
IN
I
C
Limits
−
50
−
500
Unit
V
−
5 to
+
5
V
mA
DTr
1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
50
50
5
100
Unit
V
V
V
mA
DTr
2
Parameter
Symbol
Pd
Tstg
Limits
300(TOTAL)
−
55 to
+
150
Unit
mW
Total
∗
200mW per element must not be exceeded.
Supply voltage
Input voltage
Collector current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Storage temperature
∗
°
C
Tj
150
Junction temperature
°
C