Fairchild Semiconductor N/A KSD5041QTA Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CBO

Collector-Base Voltage

40

V

V

CEO

Collector-Emitter Voltage

20

V

V

EBO

Emitter-Base Voltage

7

V

I

C

Collector Current

5

A

P

C

Collector Power Dissipation

0.75

W

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

=1mA, I

B

=0

20

V

BV

EBO

Emitter-Base Breakdown Voltage

I

C

=10

µ

A, I

C

=0

7

V

I

CBO

Collector Cut-off Current

V

CB

=10V, I

E

=0

0.1

µ

A

I

EBO

Emitter Cut-off Current

V

EB

=7V, I

C

=0

0.1

µ

A

h

FE1

h

FE2

DC Current Gain 

V

CE

=2V, I

C

=0.5A

V

CE

=2V, I

C

=2A

180
150

600

V

CE 

(sat)

Collector-Emitter Saturation Voltage

I

C

=3A, I

B

=0.1A

1

V

f

T

Current Gain Bandwidth Product

V

CE

=6V, I

C

=50mA

150

MHz

C

ob

Output Capacitance

V

CB

=20V, I

E

=0, f=1MHz

50

pF

Classification P

Q

R

h

FE

180 ~ 270

230 ~ 380

340 ~ 600

• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage

1. Emitter   2. Collector   3. Base

TO-92

1