Manualsbrain.com
  1. Manuals
  2. Brands
  3. Rohm Semiconductor
  4. EMZ1T2R Bipolar Transistor Emitter reverse voltage U(CEO) -50 V
  5. Data Sheet

Rohm Semiconductor EMZ1T2R Bipolar Transistor Emitter reverse voltage U(CEO) -50 V EMZ1T2R Data Sheet

Product codes
EMZ1T2R
Download
Page of 5
EMZ1 / UMZ1N / IMZ1A 
Transistors                                                                                                                                                                       
 
 
Rev.A 2/4 
 
zElectrical characteristics (Ta = 25
°C) 
Tr
1
 (NPN) 
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
−
−
120
−
−
−
−
−
−
−
−
−
2
−
−
−
0.1
0.1
560
0.4
3.5
V
I
C
=50
µ
A
I
C
=1mA
I
E
=50
µ
A
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
V
µ
A
µ
A
−
V
PF
Typ. Max. Unit
Conditions
f
T
−
180
−
V
CE
=12V, I
E
=
−
2mA, f
=100MHz
V
CB
=12V, I
E
=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
 
 
Tr
2
 (PNP) 
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
−
60
−
50
−
6
−
−
120
−
−
−
−
−
−
−
−
−
4
−
−
−
−
0.1
−
0.1
560
−
0.5
5
V
I
C
=
−
50
µ
A
I
C
=
−
1mA
I
E
=
−
50
µ
A
V
CB
=
−
60V
V
EB
=
−
6V
V
CE
=
−
6V, I
C
=
−
1mA
I
C
/I
B
=
−
50mA/
−
5mA
V
V
µ
A
µ
A
−
V
PF
Typ. Max. Unit
Conditions
f
T
−
140
−
V
CE
=
−
12V, I
E
=2mA, f=100MHz
V
CB
=
−
12V, I
E
=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
 
 
zPackaging specifications   
Package
Code
TR
T108
3000
3000
Taping
Basic ordering 
unit (pieces)
UMZ1N
T2R
8000
EMZ1
IMZ1A
Type
 
 
 
zElectrical characteristic curves 
Tr
1 
(NPN) 
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
Ta=100˚C
V
CE
=
6V
25˚C
−
55˚C
COLLECTOR  CURRENT : I
C
 (
mA)
BASE  TO  EMITTER  VOLTAGE : V
BE
 (V)
Fig.1   Grounded emitter propagation 
 characteristics
 
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25˚C
I
B
=0A
0.40mA
0.50mA
0.45mA
COLLECTOR  CURRENT : I
C
 (mA)
COLLECTOR  TO  EMITTER  VOLTAGE  : V
CE
 (V)
Fig.2   Grounded emitter output 
            characteristics ( I )
 
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25˚C
3
µ
A
6
µ
A
9
µ
A
12
µ
A
15
µ
A
18
µ
A
21
µ
A
24
µ
A
27
µ
A
30
µ
A
COLLECTOR  CURRENT : I
C
 (mA)
COLLECTOR  TO  EMITTER  VOLTAGE : V
CE
 (V)
Fig.3   Grounded emitter output
            characteristics ( II )