Fairchild Semiconductor N/A KSC945CGTA Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

T

a

=25

°

C unless otherwise noted 

 T

a

=25

°

C unless otherwise noted 

V

CBO

Collector-Base Voltage

60

V

V

CEO

Collector-Emitter Voltage

50

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

150

mA

P

C

Collector Power Dissipation

250

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

BV

CBO

Collector-Base Breakdown Voltage

I

C

=100

µ

A, I

E

=0

60

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

=10mA, I

B

=0

50

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=10

µ

A, I

C

=0

5

V

I

CBO

Collector Cut-off Current

V

CB

=40V, I

E

=0

0.1

µ

A

I

EBO

Emitter Cut-off Current

V

EB

=3V, I

C

=0

0.1

µ

A

h

FE

DC Current Gain

V

CE

=6V, I

C

=1.0mA

40

700

V

CE

 (sat)

Collector-Emitter Saturation Voltage

I

C

=100mA, I

B

=10mA

0.15

0.3

V

f

T

Current Gain Bandwidth Product

V

CE

=6V, I

C

=10mA

300

MHz

C

ob

Output Capacitance

V

CB

=6V, I

E

=0, f=1MHz

2.5

pF

NF

Noise Figure

V

CE

=6V, I

C

=0.5mA

f=1KHz, R

S

=500

Ω

4.0

dB

Classification R

O

Y

G

L

h

FE

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

• Complement to KSA733
• Collector-Base Voltage : V

CBO

=60V

• High Current Gain Bandwidth Product : f

T

=300MHz (TYP)

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter   2. Base   3. Collector

TO-92

1