Nxp Semiconductors N/A BFS 19 NPN Case type SOT 23 I(C) 0.3 BFS19 Data Sheet
Product codes
BFS19
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN medium frequency transistor
BFS19
FEATURES
•
Low current (max. 30 mA)
•
Low voltage (max. 20 V).
APPLICATIONS
•
Medium frequency applications in thick and thin-film
circuits.
circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
package.
MARKING
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
BFS19
F2
∗
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
−
30
V
V
CEO
collector-emitter voltage
open base
−
20
V
V
EBO
emitter-base voltage
open collector
−
5
V
I
C
collector current (DC)
−
30
mA
I
CM
peak collector current
−
30
mA
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
−
250
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
T
amb
operating ambient temperature
−
65
+150
°
C