Fairchild Semiconductor N/A KSH210TF Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

 - 40

V

 V

CEO

 Collector-Emitter Voltage

 - 25

V

 V

EBO

 Emitter-Base Voltage

  - 8

V

 I

C

 Collector Current (DC)

  - 5

A

 I

CP

 Collector Peck Current (Pulse)

  - 10

A

 I

B

 Base Current

- 1

A

 P

C

 Collector Dissipation (T

C

 = 25

°

C)

12.5

W

 Collector Dissipation (T

a

 = 25

°

C)

 1.4

W

 T

J

 Junction Temperature

 150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

 I

C 

= - 10mA, I

B 

= 0

-25

V

 I

CBO

 Collector Cut-off Current

 V

CB 

= - 40V, I

E 

= 0

 -100

nA

 I

EBO

 Emitter Cut-off Current

 V

EBO 

= - 8V, I

C 

= 0

 -100

nA

 h

FE

* DC Current Gain

 V

CE 

= - 1V, I

C 

= - 500mA

 V

CE 

= - 1V, I

C 

= - 2A

 V

CE 

= - 2V, I

C 

= - 5A

 70
 45
 10

  180

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= - 500mA, I

B

= - 50mA

 I

C 

= - 2A, I

B 

= - 200mA

 I

C 

= - 5A, I

B 

= - 1A

 -0.3

-0.75

 -1.8

V
V
V

 V

BE

(sat)

* Base-Emitter Saturation Voltage

 I

C 

= - 5A, I

B 

= - 1A

 -2.5

V

 V

BE

(on)

* Base-Emitter On Voltage

 V

CE 

= - 1V, I

C 

= - 2A

 -1.6

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= - 10V, I

C 

= - 100mA

 65

MHz

 

C

ob 

 Output Capacitance

 V

CB 

= - 10V, I

E 

= 0, f = 0.1MHz

  120

pF

• High DC Current Gain
• Low Collector Emitter Saturation Voltage
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1