Fairchild Semiconductor N/A KSC2690AYSTU Data Sheet
Product codes
KSC2690AYSTU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC269
0/2
690A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
* PW
≤
10ms, Duty Cycle
≤
50%
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
350
µ
s, Duty Cycle
≤
2% Pulsed
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
: KSC2690A
120
160
160
V
V
V
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
: KSC2690A
120
160
160
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
1.2
A
I
CP
*Collector Current (Pulse)
2.5
A
I
B
Base Current(DC)
0.3
A
P
C
Collector Dissipation (T
a
=25
°
C)
1.2
W
P
C
Collector Dissipation (T
C
=25
°
C)
20
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= 120V, I
E
= 0
1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 3V, I
C
= 0
1
µ
A
h
FE1
h
FE2
* DC Current Gain
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
35
60
60
105
140
140
320
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.2A
0.4
0.7
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.2A
1
1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= 5V, I
C
= 0.2A
155
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f = 1MHz
19
pF
Classification
R
O
Y
h
FE2
60 ~ 120
100 ~ 200
160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
1. Emitter 2.Collector 3.Base