Fairchild Semiconductor N/A BD17516STU Data Sheet
Product codes
BD17516STU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/
177/
179
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
h
FE
Classificntion
* Classification 16: Only BD175
Symbol
Parameter
Value
Units
V
CBO
*Collector-Base Voltage : BD175
: BD177
: BD179
: BD179
45
60
80
60
80
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : BD175
: BD177
: BD179
: BD179
45
60
80
60
80
V
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
3
A
I
CP
*Collector Current (Pulse)
7
A
P
C
Collector Dissipation (T
C
=25
°
C)
30
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
: BD177
: BD179
I
C
= 100mA, I
B
= 0
45
60
80
60
80
V
V
V
V
V
I
CBO
Collector Cut-off Current : BD175
: BD177
: BD179
: BD179
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
100
100
100
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE1
h
FE2
* DC Current Gain
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
40
15
15
250
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.1A
0.8
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= 2V, I
C
= 1A
1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 250mA
3
MHz
Classification
6
10
16
h
FE1
40 ~ 100
63 ~ 160
100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
Applications
• Complement to BD 176/178/180 respectively
1
TO-126
1. Emitter 2.Collector 3.Base