Infineon Technologies N/A BCX 68-16 NPN Case type SOT 89 I(C BCX68-16 Data Sheet

Infineon Technologies

Product codes

BCX68-16

Semiconductor Group

2

BCX 68

Electrical Characteristics
at

T

A

= 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

I

C

= 30 mA

V

(BR)CE0

20

–

–

Collector-base breakdown voltage

I

C

= 10

µ

A

V

(BR)CB0

25

–

–

–

DC current gain

1)

I

C

= 5 mA,

V

CE

= 10 V

I

C

= 500 mA,

V

CE

= 1 V

BCX 68
BCX 68-10
BCX 68-16
BCX 68-25

I

C

= 1 A,

V

CE

= 1 V

h

FE

50

85
85
100
160
60

–

–
100
160
250
–

–

375
160
250
375
–

MHz

Transition frequency

I

C

= 100 mA,

V

CE

= 5 V,

f

= 20 MHz

f

T

–

100

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

AC characteristics

Emitter-base breakdown voltage

I

E

= 1

µ

A

V

(BR)EB0

5

–

–

nA

µ

A

Collector cutoff current

V

CB

= 25 V

V

CB

= 25 V,

T

A

= 150 ˚C

I

CB0

–
–

–
–

100
100

µ

A

Emitter cutoff current

V

EB

= 5 V

I

EB0

–

–

10

V

Collector-emitter saturation voltage

1)

I

C

= 1 A,

I

B

= 100 mA

V

CEsat

–

–

0.5

Base-emitter voltage

1)

I

C

= 5 mA,

V

CE

= 10 V

I

C

= 1 A,

V

CE

= 1 V

V

BE

–
–

0.6
–

–
1

1)

Pulse test:

t

≤

300

µ

s,

D

= 2 %.