Infineon Technologies N/A BFP 183 NPN Case type SOT 143 I(C) BFP183 Data Sheet
Product codes
BFP183
2007-04-20
BFP183
1
1
2
3
4
NPN Silicon RF Transistor*
•
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
•
f
T
= 8 GHz, F = 0.9 dB at 900 MHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP183
RHs
1=C
2=E
3=B
4=E
-
-
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
65
mA
Base current
I
B
5
Total power dissipation
2)
T
S
≤
76 °C
P
tot
250
mW
Junction temperature
T
j
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
3)
R
thJS
≤
295
K/W
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance