Fairchild Semiconductor N/A KSA812YMTF Data Sheet
Product codes
KSA812YMTF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSA812
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-60
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-100
mA
P
C
Collector Power Dissipation
150
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= -60V, I
E
=0
-0.1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= -5V, I
C
=0
-0.1
µ
A
h
FE
DC Current Gain
V
CE
= -6V, I
C
= -1mA
90
200
600
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -100mA, I
B
= -10mA
-0.18
-0.3
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -6V, I
C
= -1mA
-0.55
-0.62
-0.65
V
f
T
Current Gain Bandwidth Product
V
CE
= -6V, I
C
= -10mA
180
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0, f=1MHz
4.5
pF
Classification
O
Y
G
L
h
FE
90 ~ 180
135 ~ 270
200 ~ 400
300 ~ 600
1. Base 2. Emitter 3. Collector
KSA812
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC1623
D 1 O
Marking
h
FE
grade
SOT-23
1
2
3