Fairchild Semiconductor N/A KSC5402DTTU Data Sheet

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSC5402D/KSC5402DT Rev. C0

1 

December 2009

• High Voltage High Speed Power Switch  Application

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time 

• Two Package Choices; D-PAK or TO-220

T

A

=25

°C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle<10%

T

A

=25

°C unless otherwise noted

* Mounted on 1” square PCB (FR4 ro G-10 Material)

V

CBO

 Collector-Base Voltage

1000

V

V

CEO

 Collector-Emitter Voltage

450

V

V

EBO

 Emitter-Base Voltage

12

V

I

C

 Collector Current (DC)

2

A

I

CP

 *Collector Current (Pulse)

5

A

I

B

 Base Current (DC)

1

A

I

BP

 *Base Current (Pulse)

2

A

P

C

 Power Dissipation(T

C

=25

°C)     : D-PAK*

                                                    : TO-220

30
50

W
W

T

J

 Junction Temperature

150

°C

T

STG

 Storage Temperature

- 65 to 150

°C

R

θJC

Thermal Resistance 

Junction to Case

2.5

4.17*

°C/W

R

θJA

Junction to Ambient

62.5

50

°C/W

T

L

Maximum Lead Temperature for Soldering Purpose
; 1/8”  from Case for 5 Seconds

270

270

°C

C

B

E

Equivalent Circuit

1

1.Base    2.Collector    3.Emitter

1