Infineon Technologies N/A BFR 193 NPN Case type SOT 23 I(C) BFR193 Data Sheet
Product codes
BFR193
2012-04-13
1
BFR193
1
2
3
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• f
• For linear broadband amplifiers
• f
T
= 8 GHz, NF
min
= 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR193
RCs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
80
mA
Base current
I
B
10
Total power dissipation
1)
T
S
≤ 69°C
P
tot
580
mW
Junction temperature
T
J
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
Stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
≤ 140
K/W
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)