Infineon Technologies N/A BFR 93 A NPN Case type SOT 23 I(C) BFR93A Data Sheet
Product codes
BFR93A
2012-06-25
1
BFR93A
1
2
3
NPN Silicon RF Transistor
• For low-noise, high gain broadband amplifiers at
collector currents from 2 mA to 30 mA
collector currents from 2 mA to 30 mA
• Pb-free (RoHS compliant) package
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR93A
R2s
1=B
2=E
3=C
SOT23
Maximum Ratings
at T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
90
mA
Base current
I
B
9
Total power dissipation
1)
T
S
≤ 106 °C
P
tot
300
mW
Junction temperature
T
J
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
Stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
≤ 145
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)