STMicroelectronics N/A BD 645 NPN Case type TO 220 I(C) 12 A BDX53B Data Sheet
Product codes
BDX53B
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
MAY 1993 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
BD646, BD648, BD650 and BD652
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω
,
V
BE(off)
= 0, R
S
= 0.1
Ω
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD645
BD647
BD649
BD651
V
CBO
80
100
120
140
V
Collector-emitter voltage (I
B
= 0)
BD645
BD647
BD649
BD651
V
CEO
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
8
A
Peak collector current (see Note 1)
I
CM
12
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
P
tot
62.5
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
½LI
C
2
50
mJ
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
°C