Infineon Technologies N/A SMBT 3904 NPN Case type SOT 23 I(C SMBT3904 Data Sheet
Product codes
SMBT3904
2011-12-14
1
SMBT3904...MMBT3904
NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
• Complementary types: SMBT3906... MMBT3906
• SMBT3904S: For orientation in reel
see package information below
• SMBT3904S: For orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
SMBT3904/MMBT3904
SMBT3904S
SMBT3904S
s1A
s1A
s1A
1=B
1=E1
1=E1
2=E
2=B1
2=B1
3=C
3=C2
3=C2
-
4=E2
4=E2
-
5=B2
5=B2
-
6=C1
6=C1
SOT23
SOT363
SOT363
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
40
V
Collector-base voltage
V
CBO
60
Emitter-base voltage
V
EBO
6
Collector current
I
C
200
mA
Total power dissipation-
T
T
S
≤ 71°C, SOT23, SMBT3904
T
S
≤ 115°C, SOT363, SMBT3904S
P
tot
330
250
250
mV
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
SMBT3904/MMBT3904
SMBT3904S
SMBT3904S
R
thJS
≤ 240
≤ 140
≤ 140
K/W
1
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)