Kerafol BU2708AX BU Transistor NPN SOT 399 (TOP 3D) 8A 825V BU2708AX Data Sheet

Product codes
BU2708AX
Page of 8
Philips Semiconductors
Product specification
 Silicon Diffused Power Transistor
BU2708AX 
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand V
CES
 pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
 = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
 
 25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
 = 4 A; I
B
 = 1.33 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
4
-
A
t
s
Storage time
I
Csat
 = 4 A; f = 16 kHz
4.8
5.5
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
 = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
BM
Reverse base current peak value 
1
-
5
A
P
tot
Total power dissipation
T
hs
 
  25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
Ω
)
case
1 2 3
b
c
e
Turn-off current.
September 1997
1
Rev 1.100