Infineon Technologies N/A BFQ 19 S NPN Case type SOT 89 I(C) BFQ19S Data Sheet
Product codes
BFQ19S
2010-03-12
1
BFQ19S
1
2
2
3
NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFQ19S
FG
1 = B
2 = C
3 = E
SOT89
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
3
Collector current
I
C
210
mA
Base current
I
B
21
Total power dissipation
2)
T
S
≤ 85°C
P
tot
1
W
Junction temperature
T
j
150
°C
Operation junction temperature range
T
jo
- ... -
-
Ambient temperature
T
A
-65 ... 150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
3)
R
thJS
≤ 65
K/W
1
Pb-containing package may be available upon special request
2
TS is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance