Nxp Semiconductors BU2523AX BU Transistor NPN SOT 399 (TOP 3D) 11A 800V BU2523AX Data Sheet
Product codes
BU2523AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AX
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 5.5 A; T
j
= 85˚C; f = 64 kHz
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.12. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 0.3 - 2
µ
H;
C
FB
= 0.5 - 8 nF; I
B(end)
= 0.55 - 1.1 A
Fig.13. Reverse bias safe operating area. T
j
≤
T
jmax
Fig.14. I
Csat
during normal running vs. frequency of
operation for optimum performance
0
0.5
1
1.5
2
0
1
2
3
4
5
ts/tf / us
BU2523AF/DF/AX/DX
IB / A
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
100
1000
0
10
20
30
VCE / V
IC / A
BU2523
Area where
fails occur
fails occur
1500
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
BU2523AF/AX
frequency (kHz)
Ic(sat) (A)
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
September 1997
4
Rev 1.100