STMicroelectronics N/A BDX 34 C PNP Case type TO 220 AB I(C) BDX34C Data Sheet
Product codes
BDX34C
BDX33B BDX33C
BDX34B BDX34C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Unit
NPN
BDX33B
BDX33C
PNP
BDX34B
BDX34C
V
CBO
Collector-Base Voltage (I
E
= 0)
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
100
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
0.25
A
P
tot
Total Dissipation at T
c
≤
25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
1/4