Infineon Technologies N/A BC 850-BW NPN Case type SOT 23 I(C BC850BW Data Sheet
Product codes
BC850BW
2011-09-09
3
BC847...-BC850...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BC847..., BC850...
I
C
= 10 mA, I
B
= 0 , BC848..., BC849...
V
(BR)CEO
45
30
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0 , BC847..., BC850...
I
C
= 10 µA, I
E
= 0 , BC848..., BC849...
V
(BR)CBO
50
30
30
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 0 , I
C
= 10 µA
V
(BR)EBO
-
6
-
Collector-base cutoff current
V
V
CB
= 45 V, I
E
= 0
V
CB
= 30 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
0.015
5
-
-
-
µA
DC current gain
1)
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.A
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.B
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.C
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.A
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.B
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.C
h
FE
-
-
-
-
-
110
200
420
200
420
140
250
480
180
290
520
250
480
180
290
520
-
-
-
-
-
220
450
800
450
800
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
-
-
-
90
200
250
600
600
mV
Base emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
-
-
-
700
900
900
-
-
-
Base-emitter voltage
1)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
770
1
Pulse test: t < 300µs; D < 2%