Infineon Technologies N/A BCR 08 PN NPN / PNP Case type SOT 363 BCR08PN Data Sheet
Product codes
BCR08PN
2011-07-28
1
BCR08PN
NPN/PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Transistors in one package
• Built in bias resistor NPN and PNP
(R
(R
1
=2.2 k
Ω, R
2
=47 k
Ω)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• Qualified according AEC Q101
1
6
2
3
5
4
EHA07176
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Tape loading orientation
EHA07193
1 2 3
4
5
6
W1s
Direction of Unreeling
Top View
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
opposite of feed hole side
Type
Marking
Pin Configuration
Package
BCR08PN
WFs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings for NPN and PNP Types
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Input forward voltage
V
i(fwd)
20
Input reverse voltage
V
i(rev)
5
DC collector current
I
C
100
mA
Total power dissipation, T
S
= 115 °C
P
tot
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
Junction - soldering point
1)
R
thJS
≤ 140
K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)