Infineon Technologies N/A BCV 48 PNP Case type SOT 89 I(C) 0 BCV48 Data Sheet
Product codes
BCV48
2011-10-05
2
BCV28, BCV48
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
≤ 20
K/W
1
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BCV28
I
C
= 10 mA, I
B
= 0 , BCV48
V
(BR)CEO
30
60
60
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 100 µA, I
E
= 0 , BCV28
I
C
= 100 µA, I
E
= 0 , BCV48
V
(BR)CBO
40
80
80
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
10
-
-
Collector-base cutoff current
V
V
CB
= 30 V, I
E
= 0 , BCV28
V
CB
= 60 V, I
E
= 0 , BCV48
V
CB
= 30 V, I
E
= 0 , T
A
≤ 150 °C, BCV28
V
CB
= 60 V, I
E
= 0 , T
A
≤ 150 °C, BCV48
I
CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
10
10
10
µA
Emitter-base cutoff current
V
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain
1)
I
C
= 10 µA, V
CE
= 1 V, BCV28
I
C
= 10 µA, V
CE
= 1 V, BCV48
I
C
= 10 mA, V
CE
= 5 V, BCV28
I
C
= 10 mA, V
CE
= 5 V, BCV48
I
C
= 100 mA, V
CE
= 5 V, BCV28
I
C
= 100 mA, V
CE
= 5 V, BCV48
I
C
= 0.5 A, V
CE
= 5 V, BCV28
I
C
= 0.5 A, V
CE
= 5 V, BCV48
h
FE
4000
2000
2000
10000
4000
20000
10000
10000
4000
2000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 100 mA, I
B
= 0.1 mA
V
CEsat
-
-
1
V
Base emitter saturation voltage
1)
I
C
= 100 mA, I
B
= 0.1 mA
V
BEsat
-
-
1.5