Infineon Technologies N/A BC 849-B W NPN Case type SOT 323 I(C) 100 mA BC849BW Data Sheet
Product codes
BC849BW
2010-06-28
3
BC846...-BC850...
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
BC846...
BC847..., BC850...
BC848..., BC849...
V
CEO
65
45
30
45
30
V
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
BC846...
BC847..., BC850...
BC848..., BC849...
V
CES
80
50
30
50
30
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
BC846...
BC847..., BC850...
BC848..., BC849...
V
CBO
80
50
30
50
30
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
BC846...
BC847..., BC850...
BC848..., BC849...
V
EBO
6
6
6
6
6
Collector current
I
C
100
mA
Peak collector current, t
p
≤ 10 ms
I
CM
200
Total power dissipation-
T
T
S
≤ 71 °C, BC846-BC850
T
S
≤ 128 °C, BC847F
T
S
≤ 135 °C, BC847L3-BC848L3
T
S
≤ 124 °C, BC846W-BC850W
P
tot
330
250
250
250
250
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
BC847F
BC847L3-BC848L3
BC846W-BC850W
R
thJS
≤ 240
≤ 90
≤ 60
≤ 60
≤ 105
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance